|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 4 of 13 found articles
| Title: |
Effect of built-in-polarization field on relaxation time and mean free path of phonons in InxGa1-xN/GaN quantum well |
| Author: |
Gedam, V. Pansari, A. Sahoo, B. K. |
| Appeared in: |
Indian journal of physics |
| Paging: | Volume 90 (2016) nr. 9 pages 991-997 |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Springer India, New Delhi |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 13 found articles
| << previous | next >> |