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Journal description
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Details for article 13 of 21 found articles
| Title: |
Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation of Al+ and N+ and subsequent annealing |
| Author: |
Kulikov, D. V. Trushin, Yu. V. Rybin, P. V. Kharlamov, V. S. |
| Appeared in: |
Technical physics |
| Paging: | Volume 44 (1999) nr. 10 pages 1168-1174 |
| Year: |
1999 |
| Contents: | |
| Publisher: |
Nauka/Interperiodica, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 21 found articles
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