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  A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
 
 
Title: A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
Author: Karamimanesh, Mehrzad
Abiri, Ebrahim
Hassanli, Kourosh
Salehi, Mohammad Reza
Darabi, Abdolreza
Appeared in: A.E.Ü.
Paging: Volume 145 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier GmbH
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 25 found articles
 
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