Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2
Titel:
Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2
Auteur:
Greene, J. E.
Verschenen in:
Critical reviews in solid state and materials sciences
Paginering:
Jaargang 11 (1983) nr. 3 pagina's 189-227
Jaar:
1983
Inhoud:
Sections I through IV, presented in Part 1 of this review, included discussions on experimental techniques, the physics of ion/surface interactions, and ion bombardment effects on film nucleation and growth kinetics. In this section, the literature on the growth of epitaxial semiconductor films is reviewed in detail in this section. The discussion is divided into separate subsections on elemental semiconductors, III-V, II-VI, IV-VI, “other” semiconductors, and metastable semiconducting alloys. In each case, an attempt was made to provide a critical analysis of the present understanding and state of the art. Early work on sputter deposition is described in a series of general review articles by Francombe223-225 as well as in more recent reviews by Greene226 and Greene and Eltokhy227 directed specifically towards semiconductors.
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