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                                       Details for article 60 of 60 found articles
 
 
  WSi x /WN/polysilicon DRAM gate stack with a 50Å WN layer as a diffusion barrier and an etch stop
 
 
Title: WSi x /WN/polysilicon DRAM gate stack with a 50Å WN layer as a diffusion barrier and an etch stop
Author: Lee, Heon
Kim, Dong-Hwan
Huh, Joo-Youl
Kim, Deok-kee
Appeared in: Materials science in semiconductor processing
Paging: Volume 8 (2005) nr. 5 pages 6 p.
Year: 2005
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 60 of 60 found articles
 
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