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Details for article 30 of 60 found articles
| Title: |
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC |
| Author: |
Pérez-Tomás, A. Fontserè, A. Jennings, M.R. Gammon, P.M. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 16 (2013) nr. 5 pages 10 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 30 of 60 found articles
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