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                                       Details for article 66 of 98 found articles
 
 
  Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate
 
 
Title: Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate
Author: Mei, T.
Li, H.
Karunasiri, G.
Fan, W.J.
Zhang, D.H.
Yoon, S.F.
Yuan, K.H.
Appeared in: Infrared physics and technology
Paging: Volume 50 (2007) nr. 2-3 pages 5 p.
Year: 2007
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 66 of 98 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands