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                                       Details for article 15 of 115 found articles
 
 
  Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
 
 
Title: Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation
Author: Pelaz, Lourdes
Marqués, Luis A.
Aboy, Maria
López, Pedro
Barbolla, Juan
Appeared in: Computational materials science
Paging: Volume 33 (2005) nr. 1-3 pages 14 p.
Year: 2005
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 15 of 115 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands