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                                       Details for article 41 of 82 found articles
 
 
  High-quality narrow gap (∼1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment
 
 
Title: High-quality narrow gap (∼1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment
Author: Sato, H
Fukutani, K
Futako, W
Kamiya, T
Fortmann, C.M
Shimizu, I
Appeared in: Solar energy materials and solar cells
Paging: Volume 66 (2001) nr. 1-4 pages 7 p.
Year: 2001
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 41 of 82 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands