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                                       Details for article 117 of 598 found articles
 
 
  Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
 
 
Title: Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
Author: Kaplar, R.J.
Kwon, D.
Ringel, S.A.
Allerman, A.A.
Kurtz, Steven R.
Jones, E.D.
Sieg, R.M.
Appeared in: Solar energy materials and solar cells
Paging: Volume 69 (2001) nr. 1 pages 7 p.
Year: 2001
Contents:
Publisher: Elsevier Science B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 117 of 598 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands