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An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells |
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Titel: |
An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells |
Auteur: |
Gao, Tian Yang, Qing Guo, Xueqi Huang, Yuqing Zhang, Zhi Wang, Zhixue Liao, Mingdun Shou, Chunhui Zeng, Yuheng Yan, Baojie Hou, Guofu Zhang, Xiaodan Zhao, Ying Ye, Jichun |
Verschenen in: |
Solar energy materials and solar cells |
Paginering: |
Jaargang 200 (2019) nr. C pagina's p. |
Jaar: |
2019 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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