Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces
Titel:
Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N2O on Si(100) surfaces
Auteur:
Sutherland, D.G.J. Akatsu, H. Copel, M. Himpsel, F.J. Callcott, T. Carlisle, J.A. Ederer, D. Jia, J.J. Jimenez, I. Perera, R. Shuh, D.K. Terminello, L.J. Tong, W.M.
Verschenen in:
Journal of electron spectroscopy and related phenomena