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                                       Details for article 8 of 14 found articles
 
 
  Study of SiO2/Si interface states in MOS devices by surface charge spectroscopy. Application to rapid thermal nitridation of silicon
 
 
Title: Study of SiO2/Si interface states in MOS devices by surface charge spectroscopy. Application to rapid thermal nitridation of silicon
Author: Ermolieff, A.
Deleonibus, S.
Marthon, S.
Blanchard, B.
Piaguet, J.
Appeared in: Journal of electron spectroscopy and related phenomena
Paging: Volume 67 (1994) nr. 3 pages 8 p.
Year: 1994
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 14 found articles
 
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