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                                       Details for article 13 of 13 found articles
 
 
  Recrystallization of He-ion implanted 6H-SiC upon annealing
 
 
Title: Recrystallization of He-ion implanted 6H-SiC upon annealing
Author: Li, B.S.
Du, Y.Y.
Wang, Z.G.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 345 (2015) nr. C pages 5 p.
Year: 2015
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 13 found articles
 
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