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Comparison of radio frequency physical vapor deposition target material used for LaO x cap layer deposition in 32nm NMOSFETs |
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Title: |
Comparison of radio frequency physical vapor deposition target material used for LaO x cap layer deposition in 32nm NMOSFETs |
Author: |
Baudot, S. Caubet, P. Grégoire, M. Bianchi, R.A. Pantel, R. Zoll, S. Gros-Jean, M. Boujamaa, R. Normandon, P. Leroux, C. Ghibaudo, G. |
Appeared in: |
Microelectronic engineering |
Paging: |
Volume 88 (2011) nr. 5 pages 4 p. |
Year: |
2011 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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