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Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface |
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Title: |
Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface |
Author: |
Tsutsui, Kazuo Shiozawa, Takashi Nagahiro, Koji Ohishi, Yoshihisa Kakushima, Kuniyuki Ahmet, Parhat Urushihara, Nobuyuki Suzuki, Mineharu Iwai, Hiroshi |
Appeared in: |
Microelectronic engineering |
Paging: |
Volume 85 (2008) nr. 10 pages 5 p. |
Year: |
2008 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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