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                                       Details for article 94 of 187 found articles
 
 
  Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface
 
 
Title: Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface
Author: Tsutsui, Kazuo
Shiozawa, Takashi
Nagahiro, Koji
Ohishi, Yoshihisa
Kakushima, Kuniyuki
Ahmet, Parhat
Urushihara, Nobuyuki
Suzuki, Mineharu
Iwai, Hiroshi
Appeared in: Microelectronic engineering
Paging: Volume 85 (2008) nr. 10 pages 5 p.
Year: 2008
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 94 of 187 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands