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                                       Details for article 82 of 187 found articles
 
 
  Formation of lateral thin-film 700-V insulated-gate bipolar transistors by using retrograde p-well double implantation scheme
 
 
Title: Formation of lateral thin-film 700-V insulated-gate bipolar transistors by using retrograde p-well double implantation scheme
Author: Juang, M.-H.
Shen, D.-H.
Jang, S.-L.
Appeared in: Microelectronic engineering
Paging: Volume 88 (2011) nr. 10 pages 4 p.
Year: 2011
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 82 of 187 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands