Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 22 of 38 found articles
 
 
  Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient
 
 
Title: Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient
Author: Chen, Changchun
Liu, Jiangfeng
Yu, Benhai
Dai, Qirun
Appeared in: Microelectronics journal
Paging: Volume 38 (2007) nr. 6-7 pages 5 p.
Year: 2007
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 38 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands