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                                       Details for article 39 of 79 found articles
 
 
  Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer
 
 
Title: Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer
Author: Ruan, Dun-Bao
Chang-Liao, Kuei-Shu
Hsu, Wen-Yen
Yi, Shih-Han
Appeared in: Vacuum
Paging: Volume 181 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 39 of 79 found articles
 
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