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A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors |
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Titel: |
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors |
Auteur: |
Wang, Weiliang Khan, Karim Zhang, Xingye Qin, Haiming Jiang, Jun Miao, Lijing Jiang, Kemin Wang, Pengjun Dai, Mingzhi Chu, Junhao |
Verschenen in: |
Microelectronics reliability |
Paginering: |
Jaargang 60 (2016) nr. C pagina's 3 p. |
Jaar: |
2016 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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