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Journal description
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Details for article 3 of 49 found articles
| Title: |
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors |
| Author: |
Saeidmanesh, M. Rahmani, M. Karimi, H. Khaledian, M. Ismail, Razali |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 54 (2014) nr. 1 pages 5 p. |
| Year: |
2014 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 49 found articles
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