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                                       Details for article 45 of 48 found articles
 
 
  Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation
 
 
Title: Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation
Author: Juang, Miin-Horng
Yu, Jim
Hwang, C.C.
Shye, D.C.
Wang, J.L.
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 2 pages 5 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 45 of 48 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands