Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 19 of 48 found articles
 
 
  1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
 
 
Title: 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
Author: Roy, Tania
Puzyrev, Yevgeniy S.
Zhang, En Xia
DasGupta, Sandeepan
Francis, Sarah A.
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Mishra, Umesh K.
Speck, James S.
Pantelides, Sokrates T.
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 2 pages 5 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 48 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands