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                                       Details for article 43 of 59 found articles
 
 
  Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking
 
 
Title: Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking
Author: Hong, Sung Chul
Lee, Wang Gu
Kim, Won Joong
Kim, Jong Hyeong
Jung, Jae Pil
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 12 pages 8 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 43 of 59 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands