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                                       Details for article 32 of 37 found articles
 
 
  The electron irradiation effects on silicon gate dioxide used for power MOS devices
 
 
Title: The electron irradiation effects on silicon gate dioxide used for power MOS devices
Author: Badila, M.
Godignon, Ph.
Millan, J.
Berberich, S.
Brezeanu, G.
Appeared in: Microelectronics reliability
Paging: Volume 41 (2001) nr. 7 pages 4 p.
Year: 2001
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 32 of 37 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands