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Journal description
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Details for article 28 of 37 found articles
| Title: |
Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer |
| Author: |
Jalabert, L. Temple-Boyer, P. Sarrabayrouse, G. Cristiano, F. Colombeau, B. Voillot, F. Armand, C. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 41 (2001) nr. 7 pages 5 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 28 of 37 found articles
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