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                                       Details for article 9 of 19 found articles
 
 
  Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture
 
 
Title: Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture
Author: Militaru, L
Souifi, A
Mouis, M
Chantre, A
Brémond, G
Appeared in: Microelectronics reliability
Paging: Volume 41 (2001) nr. 2 pages 11 p.
Year: 2001
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 9 of 19 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands