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Journal description
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Details for article 4 of 21 found articles
| Title: |
A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V g=V d |
| Author: |
Mu, Fuchen Xu, Mingzhen Tan, Changhua Duan, Xiaorong |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 41 (2001) nr. 11 pages 5 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 21 found articles
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