Influence of the silicon nitride oxidation on the performances of NCLAD isolation 1 Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996. 1
Titel:
Influence of the silicon nitride oxidation on the performances of NCLAD isolation 1 Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996. 1
Auteur:
Tixier, A. Senez, V. Baccus, B. Marmiroli, A. Colpani, P. Rebora, A. Carnevale, G.P.