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Journal description
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Details for article 11 of 17 found articles
| Title: |
Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs |
| Author: |
Sheu, S Liou, J.J Huang, C.I |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 38 (1998) nr. 1 pages 8 p. |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 17 found articles
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