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Journal description
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Details for article 83 of 140 found articles
| Title: |
Modelling of gate-induced drain leakage in relation to technological parameters and temperature |
| Author: |
Bouhdada, A. Bakkali, S. Touhami, A. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 37 (1997) nr. 4 pages 4 p. |
| Year: |
1997 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 83 of 140 found articles
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