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                                       Details for article 89 of 157 found articles
 
 
  Microvoids and defect chemistry at the Si-SiO2 interface studied by positron annihilation depth profiling
 
 
Title: Microvoids and defect chemistry at the Si-SiO2 interface studied by positron annihilation depth profiling
Author:
Appeared in: Microelectronics reliability
Paging: Volume 31 (1991) nr. 1 pages 1 p.
Year: 1991
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 89 of 157 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands