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Journal description
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Details for article 151 of 153 found articles
| Title: |
Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges |
| Author: | |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 30 (1990) nr. 3 pages 626 |
| Year: |
1990 |
| Contents: | |
| Publisher: |
Pergamon Press plc |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 151 of 153 found articles
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