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                                       Details for article 121 of 198 found articles
 
 
  Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
 
 
Title: Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
Author:
Appeared in: Microelectronics reliability
Paging: Volume 24 (1984) nr. 5 pages 1 p.
Year: 1984
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 121 of 198 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands