Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 60 of 152 found articles
 
 
  Influence of interface charge inhomogeneities on the measurement of surface state densities in Si-SiO2 interfaces by means of the MOS a.c. conductance technique
 
 
Title: Influence of interface charge inhomogeneities on the measurement of surface state densities in Si-SiO2 interfaces by means of the MOS a.c. conductance technique
Author:
Appeared in: Microelectronics reliability
Paging: Volume 17 (1978) nr. 4 pages 2 p.
Year: 1978
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 60 of 152 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands