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                                       Details for article 68 of 96 found articles
 
 
  Oxygen vacancy model for the E1 ′ center in SiO2
 
 
Title: Oxygen vacancy model for the E1 ′ center in SiO2
Author:
Appeared in: Microelectronics reliability
Paging: Volume 13 (1974) nr. 2 pages 1 p.
Year: 1974
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 68 of 96 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands