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                                       Details for article 10 of 12 found articles
 
 
  Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory
 
 
Title: Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory
Author: Chandrashekhar, Sandhya
Puchner, Helmut
Mitani, Jun
Shinozaki, Satoshi
Sardi, Mohamed
Hoffman, David
Appeared in: Microelectronics reliability
Paging: Volume 108 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 12 found articles
 
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