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Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal |
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Titel: |
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal |
Auteur: |
Zhou, Longda Wang, Guilei Yin, Xiaogen Ji, Zhigang Liu, Qianqian Xu, Hao Yang, Hong Simoen, Eddy Wang, Xiaolei Ma, Xueli Li, Yongliang Kong, Zhenzhen Jiang, Haojie Luo, Ying Yin, Huaxiang Zhao, Chao Wang, Wenwu |
Verschenen in: |
Microelectronics reliability |
Paginering: |
Jaargang 107 () nr. C pagina's p. |
Jaar: |
2020 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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