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Journal description
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Details for article 30 of 33 found articles
| Title: |
Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2 |
| Author: |
Hasegawa, Fumio Onomura, Masaaki Mogi, Chikako Nannichi, Yasuo |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 31 (1988) nr. 2 pages 6 p. |
| Year: |
1988 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 30 of 33 found articles
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